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DISCRETE SEMICONDUCTORS
DATA SHEET
BLT50 UHF power transistor
Product specification April 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * SMD encapsulation * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. PINNING - SOT223
BLT50
QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter class-B test circuit (note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION
age
f (MHz) VCE (V) 470 7.5
PL (W) 1.2
Gp (dB) > 10
c (%) > 55
4
c
PIN 1 2 3 4
DESCRIPTION emitter base emitter collector
1
Top view
handbook, halfpage
b
MBB012
e
2
3
MSB002 - 1
Fig.1 Simplified outline and symbol.
April 1991
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz f > 1 MHz; Ts = 103 C (note 1) - - - - - - MIN.
BLT50
MAX. 20 10 3 500 1.5 2
UNIT V V V mA A W
Tstg Tj Note
storage temperature range operating junction temperature
-65 -
150 175
C C
1. Ts = temperature at soldering point of collector tab.
handbook, halfpage
1
MEA217
IC (A) 0.5
0.2
0.1
1
10
VCE (V)
102
Ts = 103 C.
Fig.2 DC SOAR.
THERMAL RESISTANCE SYMBOL Rth j-s(DC) PARAMETER from junction to soldering point CONDITIONS Ptot = 2 W; Ts = 103 C MAX. 36 UNIT K/W
April 1991
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE ESBR PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain second breakdown energy CONDITIONS open emitter; IC = 5 mA open base; IC = 10 mA open collector; IE = 1 mA VBE = 0; VCE = 10 V VCE = 5 V; IC = 300 mA L = 25 mH; RBE = 10 ; f = 50 Hz VCB = 7.5 V; IE = Ie = 0; f = 1 MHz VCE = 7.5 V; IC = 0; f = 1 MHz MIN. 20 10 3 - 25 0.55 TYP. - - - - - -
BLT50
MAX. - - - 250 - -
UNIT V V V A
mJ
Cc
collector capacitance
-
4.7
6
pF
Cre
feedback capacitance
-
2.9
4.5
pF
MEA218
handbook,10 halfpage
Cc (pF) 8
6
4
2
0
0
2
4
6
8
10 VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.3
Collector capacitance as a function of collector-base voltage, typical values.
April 1991
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter class-B test circuit. MODE OF OPERATION c.w. narrow band f (MHz) 470 7.5 VCE (V) 1.2 PL (W) Gp (dB) > 10 typ. 11.2
BLT50
c (%) > 55 typ. 65
MEA219
handbook,16 halfpage
2 handbook, halfpage 100 (%) 80
MEA220
Gp (dB) 12 Gp
PL (W)
8
60
1
4 40 0 0.6 0
1.0
1.4
1.8 PL (W)
2.2
0
100
PD (mW)
200
VCE = 7.5 V; f = 470 MHz.
VCE = 7.5 V; f = 470 MHz.
Fig.4
Gain and efficiency as functions of load power, typical values.
Fig.5
Load power as a function of drive power, typical values.
Ruggedness in class-B operation The BLT50 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 9 V, f = 470 MHz and Ts 60 C, where Ts is the temperature at the soldering point of the collector tab.
April 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLT50
handbook, full pagewidth
C1 50 C2
L1 TUT
L4
L5
C4 50 C3
L2
L6
L7 +VCC
R1
L3 C5
R2 C6 C7
MBA576
Fig.6 Class-B test circuit at f = 470 MHz.
List of components (see test circuit) COMPONENT C1 C2 C3 C4 C5 C6 C7 L1 L2 L3, L7 L4 L5 L6 R1, R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2); thickness 116 inch. DESCRIPTION film dielectric trimmer film dielectric trimmer film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) 63 V electrolytic capacitor stripline (note 2) 5 turns enamelled 0.4 mm copper wire grade 3B1 Ferroxcube wideband RF choke stripline (note 2) 3 turns enamelled 0.4 mm copper wire 0.25 W metal film resistor 10 , 5% 50 36 mm x 4.7 mm int. dia. 4 mm int. dia. 3 mm 1 turn enamelled 1.4 mm copper wire 5 nH VALUE 1.4 to 5.5 pF 1.4 to 5.5 pF 2 to 9 pF 2 to 9 pF 100 pF 1 nF 2.2 F 50 54 mm x 4.7 mm int. dia. 3 mm 4312 020 36640 DIMENSIONS CATALOGUE NO. 2222 809 09004 2222 809 09001 2222 809 09002 2222 809 09005
April 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLT50
handbook, full pagewidth
VCC L7 L3 C5 R2 R1 C1 C2 L1 L2 L4 L5 L6 C3 C4 C6 C7
MBA575
handbook, full pagewidth
140 mm
strap
strap
80 mm
rivets (14x) strap mounting screws (8x) strap
MBA574
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown.
Fig.7 Component layout for 470 MHz class-B test circuit.
April 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLT50
MEA221
MEA222
4 handbook, halfpage Zi () 3 ri
handbook,20 halfpage
ZL () 15 XL
2
xi
10
RL 1 5
0 350
450
550
f (MHz)
650
0 350
450
550
f (MHz)
650
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Fig.8
Input impedance (series components) as a function of frequency, typical values.
Fig.9
Load impedance (series components) as a function of frequency, typical values.
MEA223
handbook,16 halfpage
Gp (dB) 12
handbook, halfpage
8
Zi ZL
MBA451
4
0 350
450
550
f (MHz)
650
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Fig.10 Definition of transistor impedance.
Fig.11 Power gain as a function of frequency, typical values.
April 1991
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BLT50
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
April 1991
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLT50
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1991
10

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